STMicroelectronics SiC MOSFET SiC N-Channel MOSFET, 20 A, 1200 V, 3-Pin H2PAK-2 SCT20N120H

View all MOSFETs
Bulk discount available

Subtotal 50 units (supplied on a continuous strip)*

£430.00

(exc. VAT)

£516.00

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • Shipping from 17 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
50 - 99£8.60
100 - 249£7.83
250 - 499£7.64
500 +£7.44

*price indicative

Packaging Options:
RS Stock No.:
201-4416P
Mfr. Part No.:
SCT20N120H
Brand:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

1200 V

Series

SiC MOSFET

Package Type

H2PAK-2

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

0.203 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

239V

Transistor Material

SiC

Number of Elements per Chip

1

The STMicroelectronics silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. The SiC material has outstanding thermal properties.

Very tight variation of on-resistance vs. temperature
Very high operating junction temperature capability
Very fast and robust intrinsic body diode
Low capacitance