STMicroelectronics SCTW35 SiC N-Channel MOSFET, 45 A, 650 V, 3-Pin HiP247 SCTW35N65G2V

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Subtotal 5 units (supplied in a tube)*

£55.10

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£66.10

(inc. VAT)

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5 - 9£11.02
10 - 24£10.73
25 - 49£10.46
50 +£10.20

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Packaging Options:
RS Stock No.:
201-0860P
Mfr. Part No.:
SCTW35N65G2V
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

650 V

Package Type

HiP247

Series

SCTW35

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

0.045 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Number of Elements per Chip

1

Transistor Material

SiC

The STMicroelectronics 650V silicon carbide power MOSFET has a current rating of 45A and drain to source resistance 45m Ohm. It has low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Very fast and robust intrinsic body diode
Low capacitance