N-Channel MOSFET, 60 A, 61 A, 80 V, 8-Pin PowerPAIR 3 x 3FDC Vishay SiZ260DT-T1-GE3
- RS Stock No.:
- 200-6875
- Mfr. Part No.:
- SiZ260DT-T1-GE3
- Brand:
- Vishay
Discontinued
- RS Stock No.:
- 200-6875
- Mfr. Part No.:
- SiZ260DT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 60 A, 61 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAIR 3 x 3FDC | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.031 Ω, 0.031 Ω, 0.0245 Ω, 0.0247 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.4V | |
| Number of Elements per Chip | 1 | |
| Series | TrenchFET® Gen IV | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 60 A, 61 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAIR 3 x 3FDC | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.031 Ω, 0.031 Ω, 0.0245 Ω, 0.0247 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.4V | ||
Number of Elements per Chip 1 | ||
Series TrenchFET® Gen IV | ||
The Vishay SiZ260DT-T1-GE3 is a dual N-channel 80V (D-S) MOSFETs.
TrenchFET Gen IV power MOSFETs
100 % Rg and UIS tested
Integrated MOSFET half bridge power stage
Optimized Qgs/Qgs ratio improves switching
characteristics
100 % Rg and UIS tested
Integrated MOSFET half bridge power stage
Optimized Qgs/Qgs ratio improves switching
characteristics