Dual N-Channel MOSFET, 80 A, 143 A, 30 V, 6-Pin PowerPAIR 3 x 3FDC Vishay SiZF360DT-T1-GE3
- RS Stock No.:
- 200-6871
- Mfr. Part No.:
- SiZF360DT-T1-GE3
- Brand:
- Vishay
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 200-6871
- Mfr. Part No.:
- SiZF360DT-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A, 143 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAIR 3 x 3FDC | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Number of Elements per Chip | 2 | |
| Series | TrenchFET® Gen IV | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A, 143 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAIR 3 x 3FDC | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 0.0019 Ω, 0.0026 Ω, 0.0045 Ω, 0.0075 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Number of Elements per Chip 2 | ||
Series TrenchFET® Gen IV | ||
The Vishay SiZF360DT-T1-GE3 is a dual N-channel 30V (D-S) MOSFET with Schottky diode.
TrenchFET Gen IV power MOSFET
SkyFET low side MOSFET with integrated Schottky
100 % Rg and UIS tested
Double cooled feature provides additional avenue for thermal transfer
Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint
SkyFET low side MOSFET with integrated Schottky
100 % Rg and UIS tested
Double cooled feature provides additional avenue for thermal transfer
Internally connected half-bridge configuration in 3.3 mm-by-3.3 mm footprint