P-Channel MOSFET, 16 A, 30 V, 8-Pin PowerPAK 1212-8W Vishay SQS423ENW-T1_GE3
- RS Stock No.:
- 200-6825
- Mfr. Part No.:
- SQS423ENW-T1_GE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 200-6825
- Mfr. Part No.:
- SQS423ENW-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK 1212-8W | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 0.06 Ω, 0.021 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Number of Elements per Chip | 1 | |
| Series | AEC-Q101, Automotive, TrenchFET® | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type P | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK 1212-8W | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 0.06 Ω, 0.021 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Number of Elements per Chip 1 | ||
Series AEC-Q101, Automotive, TrenchFET® | ||
The Vishay SQS423ENW-T1_GE3 is a automotive P-channel 30V (D-S) 175°C MOSFET.
TrenchFET power MOSFET
AEC-Q101 qualified d
100 % Rg and UIS tested
AEC-Q101 qualified d
100 % Rg and UIS tested