N-Channel MOSFET, 16 A, 200 V, 3-Pin TO-3 Magnatec BUZ901DP
- RS Stock No.:
- 197-9957
- Mfr. Part No.:
- BUZ901DP
- Brand:
- Magnatec
Stock information currently inaccessible
- RS Stock No.:
- 197-9957
- Mfr. Part No.:
- BUZ901DP
- Brand:
- Magnatec
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Magnatec | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 16 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-3 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Maximum Power Dissipation | 250 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -14 V, +14 V | |
| Transistor Material | Si | |
| Length | 39mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 25mm | |
| Height | 8.7mm | |
| Select all | ||
|---|---|---|
Brand Magnatec | ||
Channel Type N | ||
Maximum Continuous Drain Current 16 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-3 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Maximum Power Dissipation 250 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -14 V, +14 V | ||
Transistor Material Si | ||
Length 39mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 25mm | ||
Height 8.7mm | ||
RoHS Status: Not Applicable