STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60M6
- RS Stock No.:
- 195-2681P
- Mfr. Part No.:
- STWA75N60M6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 5 units (supplied in a tube)*
£37.30
(exc. VAT)
£44.75
(inc. VAT)
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- Shipping from 21 April 2026
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Units | Per unit |
|---|---|
| 5 - 9 | £7.46 |
| 10 - 24 | £7.26 |
| 25 - 49 | £7.08 |
| 50 + | £6.90 |
*price indicative
- RS Stock No.:
- 195-2681P
- Mfr. Part No.:
- STWA75N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 72 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 36 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 446 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 106 nC @ 10 V | |
| Length | 15.9mm | |
| Width | 5.1mm | |
| Height | 21.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 446 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 106 nC @ 10 V | ||
Length 15.9mm | ||
Width 5.1mm | ||
Height 21.1mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected