STMicroelectronics N-Channel MOSFET, 72 A, 600 V, 3-Pin TO-247 STWA75N60DM6
- RS Stock No.:
- 195-2679
- Mfr. Part No.:
- STWA75N60DM6
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 195-2679
- Mfr. Part No.:
- STWA75N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 72 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 36 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 446 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Length | 15.9mm | |
| Number of Elements per Chip | 1 | |
| Width | 5.1mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 117 nC @ 10 V | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 36 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 446 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Width 5.1mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 117 nC @ 10 V | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
- COO (Country of Origin):
- CN
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) * area with one of the most effective switching behaviors available in the market for the most demanding high efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected