onsemi N-Channel MOSFET, 57.8 A, 100 V, 8-Pin WDFN NVTFS010N10MCLTAG
- RS Stock No.:
- 195-2554P
- Mfr. Part No.:
- NVTFS010N10MCLTAG
- Brand:
- onsemi
Bulk discount available
Subtotal 120 units (supplied on a continuous strip)*
£76.32
(exc. VAT)
£91.56
(inc. VAT)
FREE delivery for orders over £50.00
Limited stock
- 5,040 left, ready to ship
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Units | Per unit |
|---|---|
| 120 - 270 | £0.636 |
| 300 + | £0.552 |
*price indicative
- RS Stock No.:
- 195-2554P
- Mfr. Part No.:
- NVTFS010N10MCLTAG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 57.8 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | WDFN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 15.9 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 77.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 22 nC @ 10 V | |
| Width | 3.15mm | |
| Length | 3.3mm | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.3V | |
| Height | 0.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 57.8 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type WDFN | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 15.9 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 77.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 22 nC @ 10 V | ||
Width 3.15mm | ||
Length 3.3mm | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.3V | ||
Height 0.75mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Automotive Power MOSFET in a 3x3mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. MOSFET and PPAP capable suitable for automotive applications.
Small Footprint (3x3 mm)
Compact Design
Low On-Resistance
Minimizes Conduction Losses
Low Capacitance
Minimize Driver Losses
PPAP Capable
Suitable for Automotive Applications
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies
Compact Design
Low On-Resistance
Minimizes Conduction Losses
Low Capacitance
Minimize Driver Losses
PPAP Capable
Suitable for Automotive Applications
Application
Reverser Battery protection
Power switches (High Side Driver, Low Side Driver, H-Bridges etc.)
Switching power supplies