onsemi N-Channel MOSFET, 52 A, 40 V, 4-Pin LFPAK, SOT-669 NVMYS7D3N04CLTWG
- RS Stock No.:
- 195-2537P
- Mfr. Part No.:
- NVMYS7D3N04CLTWG
- Brand:
- onsemi
Bulk discount available
Subtotal 120 units (supplied on a continuous strip)*
£51.00
(exc. VAT)
£61.20
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 5,820 unit(s) shipping from 27 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 120 - 270 | £0.425 |
| 300 + | £0.368 |
*price indicative
- RS Stock No.:
- 195-2537P
- Mfr. Part No.:
- NVMYS7D3N04CLTWG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | LFPAK, SOT-669 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 38 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 7 nC @ 4.5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 5mm | |
| Width | 4.25mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.15mm | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type LFPAK, SOT-669 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 38 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 7 nC @ 4.5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 5mm | ||
Width 4.25mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.15mm | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.2V | ||
Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
LFPAK4 Package, Industry Standard
PPAP Capable
These Devices are Pb−Free