onsemi N-Channel MOSFET, 10 A, 650 V, 4-Pin PQFN4 FCMT360N65S3
- RS Stock No.:
- 195-2503P
- Mfr. Part No.:
- FCMT360N65S3
- Brand:
- onsemi
Bulk discount available
Subtotal 200 units (supplied on a reel)*
£285.60
(exc. VAT)
£342.80
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,980 unit(s), ready to ship
Units | Per unit |
|---|---|
| 200 - 480 | £1.428 |
| 500 + | £1.238 |
*price indicative
- RS Stock No.:
- 195-2503P
- Mfr. Part No.:
- FCMT360N65S3
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PQFN4 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 83 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Width | 8mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Length | 8mm | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.05mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PQFN4 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 83 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Width 8mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Length 8mm | ||
Forward Diode Voltage 1.2V | ||
Height 1.05mm | ||
Minimum Operating Temperature -55 °C | ||
SUPERFET III MOSFET is ON Semiconductor's brand-new high voltage super-junction(SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET III MOSFET is very suitable for the switching power applications such as server/telecom power, adapter and solar inverter applications. The Power88 package is an ultra-slim surface-mount package (1mm high) with a low profile and small footprint (8 * 8 mm2). SUPERFET III MOSFET in a Power88 package offers excellent switching performance due to lower parasitic source inductance and separated power and drive sources.