N-Channel MOSFET Transistor, 18 A, 3-Pin TO-220FP STMicroelectronics STF26N60DM6
- RS Stock No.:
- 192-5048
- Mfr. Part No.:
- STF26N60DM6
- Brand:
- STMicroelectronics
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 192-5048
- Mfr. Part No.:
- STF26N60DM6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
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Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 195 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 4.6mm | |
| Height | 16.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 195 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Length 10.4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 4.6mm | ||
Height 16.4mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with effective switching behavior for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
Extremely high dv/dt ruggedness
Zener-protected