STMicroelectronics N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STP26N65DM2

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Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
Packaging Options:
RS Stock No.:
192-4952
Mfr. Part No.:
STP26N65DM2
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

25 A

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

160 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Number of Elements per Chip

1

Length

10.4mm

Typical Gate Charge @ Vgs

35.5 nC @ 10 V

Width

4.6mm

Maximum Operating Temperature

+150 °C

Height

15.75mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.6V

COO (Country of Origin):
CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.

Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance

Extremely high dv/dt ruggedness
Zener-protected

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