STMicroelectronics N-Channel MOSFET Transistor, 25 A, 3-Pin TO-220 STP26N65DM2
- RS Stock No.:
- 192-4952
- Mfr. Part No.:
- STP26N65DM2
- Brand:
- STMicroelectronics
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 192-4952
- Mfr. Part No.:
- STP26N65DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
| Select all | Attribute | Value | 
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 160 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 35.5 nC @ 10 V | |
| Width | 4.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15.75mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
| Brand STMicroelectronics | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 25 A | ||
| Package Type TO-220 | ||
| Mounting Type Through Hole | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 190 Ω | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 5V | ||
| Minimum Gate Threshold Voltage 3V | ||
| Maximum Power Dissipation 160 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage ±25 V | ||
| Number of Elements per Chip 1 | ||
| Length 10.4mm | ||
| Typical Gate Charge @ Vgs 35.5 nC @ 10 V | ||
| Width 4.6mm | ||
| Maximum Operating Temperature +150 °C | ||
| Height 15.75mm | ||
| Minimum Operating Temperature -55 °C | ||
| Forward Diode Voltage 1.6V | ||
- COO (Country of Origin):
- CN
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
 
Extremely high dv/dt ruggedness
Zener-protected
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
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