STMicroelectronics N-Channel MOSFET Transistor, 5.5 A, 600 V, 8-Pin PowerFLAT 5 x 6 HV STL10N60M6
- RS Stock No.:
- 192-4825P
- Mfr. Part No.:
- STL10N60M6
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£46.20
(exc. VAT)
£55.45
(inc. VAT)
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- Shipping from 30 January 2026
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Units | Per unit |
|---|---|
| 25 - 45 | £1.848 |
| 50 - 120 | £1.754 |
| 125 - 245 | £1.656 |
| 250 + | £1.572 |
*price indicative
- RS Stock No.:
- 192-4825P
- Mfr. Part No.:
- STL10N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 5.5 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | PowerFLAT 5 x 6 HV | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 660 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Typical Gate Charge @ Vgs | 8.8 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 6mm | |
| Width | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Forward Diode Voltage | 1.6V | |
| Height | 0.95mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 5.5 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type PowerFLAT 5 x 6 HV | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 660 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Typical Gate Charge @ Vgs 8.8 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 6mm | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Forward Diode Voltage 1.6V | ||
Height 0.95mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected