N-Channel MOSFET Transistor, 15 A, 3-Pin D2PAK STMicroelectronics STB22N60M6
- RS Stock No.:
- 192-4650
- Mfr. Part No.:
- STB22N60M6
- Brand:
- STMicroelectronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 192-4650
- Mfr. Part No.:
- STB22N60M6
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Package Type | D2PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 230 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.75V | |
| Minimum Gate Threshold Voltage | 3.25V | |
| Maximum Power Dissipation | 130 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Width | 9.35mm | |
| Number of Elements per Chip | 1 | |
| Height | 4.37mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Package Type D2PAK | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 230 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.75V | ||
Minimum Gate Threshold Voltage 3.25V | ||
Maximum Power Dissipation 130 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Width 9.35mm | ||
Number of Elements per Chip 1 | ||
Height 4.37mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
- COO (Country of Origin):
- CN
The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviors available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected
Lower RDS(on) per area vs previous generation
Low gate input resistance
Zener-protected