ROHM SiC N-Channel MOSFET, 70 A, 650 V, 4-Pin TO-247-4 SCT3030ARC14
- RS Stock No.:
- 191-8501
- Mfr. Part No.:
- SCT3030ARC14
- Brand:
- ROHM
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 191-8501
- Mfr. Part No.:
- SCT3030ARC14
- Brand:
- ROHM
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | ROHM | |
Channel Type | N | |
Maximum Continuous Drain Current | 70 A | |
Maximum Drain Source Voltage | 650 V | |
Package Type | TO-247-4 | |
Mounting Type | Through Hole | |
Pin Count | 4 | |
Maximum Drain Source Resistance | 39 mΩ | |
Channel Mode | Enhancement | |
Maximum Gate Threshold Voltage | 5.6V | |
Minimum Gate Threshold Voltage | 2.7V | |
Maximum Power Dissipation | 262 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | 22 V | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 104 nC @ 18V | |
Transistor Material | SiC | |
Maximum Operating Temperature | +175 °C | |
Select all | ||
---|---|---|
Brand ROHM | ||
Channel Type N | ||
Maximum Continuous Drain Current 70 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 39 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.6V | ||
Minimum Gate Threshold Voltage 2.7V | ||
Maximum Power Dissipation 262 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage 22 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 104 nC @ 18V | ||
Transistor Material SiC | ||
Maximum Operating Temperature +175 °C | ||
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