SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 onsemi NTHL080N120SC1

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RS Stock No.:
189-0254
Mfr. Part No.:
NTHL080N120SC1
Brand:
onsemi
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Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

44 A

Maximum Drain Source Voltage

1200 V

Package Type

TO-247

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

162 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.3V

Minimum Gate Threshold Voltage

1.8V

Maximum Power Dissipation

348 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-15 V, +20 V

Maximum Operating Temperature

+175 °C

Transistor Material

SiC

Length

15.87mm

Typical Gate Charge @ Vgs

56 nC @ 20 V

Number of Elements per Chip

1

Width

4.82mm

Minimum Operating Temperature

-55 °C

Height

20.82mm

Forward Diode Voltage

4V

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

1200V rated
Max RDS(on) = 110mΩ at Vgs = 20V, Id = 20A
High Speed Switching and Low Capacitance
Applications
PFC
Boost Inverter
PV Charging
End Products
Solar Inverter
Network Power Supply
Server Power Supply