STMicroelectronics Type N-Channel MOSFET, 10 A, 650 V Enhancement, 3-Pin TO-252
- RS Stock No.:
- 188-8550P
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
£5.52
(exc. VAT)
£6.625
(inc. VAT)
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In Stock
- Plus 2,115 unit(s) shipping from 10 June 2026
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Units | Per unit |
|---|---|
| 5 + | £1.104 |
*price indicative
- RS Stock No.:
- 188-8550P
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 420mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 16.5nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 110W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 2.17mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 420mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 16.5nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 110W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 2.17mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications