STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2
- RS Stock No.:
- 188-8550P
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
£5.52
(exc. VAT)
£6.625
(inc. VAT)
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In Stock
- 2,175 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £1.104 |
*price indicative
- RS Stock No.:
- 188-8550P
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 420 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.17mm | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 420 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 16.5 nC @ 10 V | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Width 6.2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.17mm | ||
Forward Diode Voltage 1.6V | ||
This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications