STMicroelectronics N-Channel MOSFET, 10 A, 3-Pin DPAK STD11N60DM2
- RS Stock No.:
- 188-8550P
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
£5.52
(exc. VAT)
£6.625
(inc. VAT)
FREE delivery for orders over £50.00
- 2,175 unit(s) ready to ship
| Units | Per unit | 
|---|---|
| 5 + | £1.104 | 
*price indicative
- RS Stock No.:
- 188-8550P
- Mfr. Part No.:
- STD11N60DM2
- Brand:
- STMicroelectronics
| Select all | Attribute | Value | 
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 420 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 16.5 nC @ 10 V | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Width | 6.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.17mm | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
| Brand STMicroelectronics | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 10 A | ||
| Package Type DPAK (TO-252) | ||
| Mounting Type Surface Mount | ||
| Pin Count 3 | ||
| Maximum Drain Source Resistance 420 mΩ | ||
| Channel Mode Enhancement | ||
| Maximum Gate Threshold Voltage 5V | ||
| Minimum Gate Threshold Voltage 4V | ||
| Maximum Power Dissipation 110 W | ||
| Transistor Configuration Single | ||
| Maximum Gate Source Voltage ±25 V | ||
| Maximum Operating Temperature +150 °C | ||
| Typical Gate Charge @ Vgs 16.5 nC @ 10 V | ||
| Length 6.6mm | ||
| Number of Elements per Chip 1 | ||
| Width 6.2mm | ||
| Minimum Operating Temperature -55 °C | ||
| Height 2.17mm | ||
| Forward Diode Voltage 1.6V | ||
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
