STMicroelectronics N-Channel MOSFET, 7.5 A, 60 V, 8-Pin SO-8 STS7NF60L
- RS Stock No.:
- 188-8543P
- Mfr. Part No.:
- STS7NF60L
- Brand:
- STMicroelectronics
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Subtotal 50 units (supplied on a continuous strip)*
£62.15
(exc. VAT)
£74.60
(inc. VAT)
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In Stock
- Plus 7,360 unit(s) shipping from 06 October 2025
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Units | Per unit |
|---|---|
| 50 - 90 | £1.243 |
| 100 - 240 | £1.117 |
| 250 - 490 | £1.005 |
| 500 + | £0.957 |
*price indicative
- RS Stock No.:
- 188-8543P
- Mfr. Part No.:
- STS7NF60L
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7.5 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SO-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 21 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±16 V | |
| Length | 5mm | |
| Number of Elements per Chip | 1 | |
| Width | 4mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 25 nC @ 4.5 V | |
| Forward Diode Voltage | 1.2V | |
| Height | 1.65mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 21 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±16 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 25 nC @ 4.5 V | ||
Forward Diode Voltage 1.2V | ||
Height 1.65mm | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TYPICAL RDS(on) = 0.017 Ω
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs