STMicroelectronics N-Channel MOSFET, 7.5 A, 60 V, 8-Pin SO-8 STS7NF60L
- RS Stock No.:
- 188-8543
- Mfr. Part No.:
- STS7NF60L
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 10 units)*
£13.08
(exc. VAT)
£15.70
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 7,360 unit(s) ready to ship
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Units | Per unit | Per Pack* |
---|---|---|
10 - 40 | £1.308 | £13.08 |
50 - 90 | £1.243 | £12.43 |
100 - 240 | £1.117 | £11.17 |
250 - 490 | £1.005 | £10.05 |
500 + | £0.957 | £9.57 |
*price indicative
- RS Stock No.:
- 188-8543
- Mfr. Part No.:
- STS7NF60L
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 7.5 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SO-8 | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 21 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | ±16 V | |
Length | 5mm | |
Number of Elements per Chip | 1 | |
Width | 4mm | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 25 nC @ 4.5 V | |
Height | 1.65mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7.5 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SO-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 21 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±16 V | ||
Length 5mm | ||
Number of Elements per Chip 1 | ||
Width 4mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 25 nC @ 4.5 V | ||
Height 1.65mm | ||
Forward Diode Voltage 1.2V | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
TYPICAL RDS(on) = 0.017 Ω
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
LOW THRESHOLD DRIVE
STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
DC MOTOR DRIVE
DC-DC CONVERTERS
BATTERY MANAGEMENT INOMADIC EQUIPMENT
POWER MANAGEMENT IPORTABLE/DESKTOP Pcs
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