STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin D2PAK STB43N65M5
- RS Stock No.:
- 188-8512P
- Mfr. Part No.:
- STB43N65M5
- Brand:
- STMicroelectronics
Subtotal 2 units (supplied on a continuous strip)*
£11.15
(exc. VAT)
£13.38
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 770 unit(s) shipping from 10 November 2025
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Units | Per unit |
|---|---|
| 2 + | £5.575 |
*price indicative
- RS Stock No.:
- 188-8512P
- Mfr. Part No.:
- STB43N65M5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 630 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Number of Elements per Chip | 1 | |
| Width | 9.35mm | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Automotive Standard | AEC-Q101 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.37mm | |
| Forward Diode Voltage | 1.6V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 630 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Number of Elements per Chip 1 | ||
Width 9.35mm | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Automotive Standard AEC-Q101 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.37mm | ||
Forward Diode Voltage 1.6V | ||
This device is an N-channel Power MOSFET based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
Extremely low RDS(on)
Low gate charge and input capacitance
Excellent switching performance
Applications
Switching applications
Low gate charge and input capacitance
Excellent switching performance
Applications
Switching applications