STMicroelectronics N-Channel MOSFET, 40 A, 30 V, 8-Pin PowerFLAT 5 x 6 STL40DN3LLH5
- RS Stock No.:
- 188-8491P
- Mfr. Part No.:
- STL40DN3LLH5
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£42.95
(exc. VAT)
£51.55
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 28 April 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.859 |
| 100 - 240 | £0.772 |
| 250 - 490 | £0.695 |
| 500 + | £0.659 |
*price indicative
- RS Stock No.:
- 188-8491P
- Mfr. Part No.:
- STL40DN3LLH5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 40 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerFLAT 5 x 6 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 50 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±22 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.2mm | |
| Typical Gate Charge @ Vgs | 4.5 nC @ 4.5 V | |
| Width | 5.1mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 0.95mm | |
| Forward Diode Voltage | 1.1V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 40 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerFLAT 5 x 6 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 50 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±22 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Length 6.2mm | ||
Typical Gate Charge @ Vgs 4.5 nC @ 4.5 V | ||
Width 5.1mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 0.95mm | ||
Forward Diode Voltage 1.1V | ||
This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology. The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Low on-resistance
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications
High avalanche ruggedness
Low gate drive power loss
Wettable flank package
Applications
Switching applications