STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5
- RS Stock No.:
- 188-8467P
- Mfr. Part No.:
- STD8N65M5
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 25 units (supplied on a continuous strip)*
£38.40
(exc. VAT)
£46.075
(inc. VAT)
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- Shipping from 16 March 2026
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Units | Per unit |
|---|---|
| 25 - 45 | £1.536 |
| 50 - 120 | £1.384 |
| 125 - 245 | £1.244 |
| 250 + | £1.184 |
*price indicative
- RS Stock No.:
- 188-8467P
- Mfr. Part No.:
- STD8N65M5
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 70 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 15 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.2mm | |
| Length | 6.6mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.17mm | |
| Forward Diode Voltage | 1.5V | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 70 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 15 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Width 6.2mm | ||
Length 6.6mm | ||
Minimum Operating Temperature -55 °C | ||
Height 2.17mm | ||
Forward Diode Voltage 1.5V | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
Worldwide best RDS(on) area
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications
MOSFET Transistors, STMicroelectronics