STMicroelectronics N-Channel MOSFET, 7 A, 3-Pin DPAK STD8N65M5

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Subtotal (1 pack of 5 units)*

£8.09

(exc. VAT)

£9.71

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20£1.618£8.09
25 - 45£1.536£7.68
50 - 120£1.384£6.92
125 - 245£1.244£6.22
250 +£1.184£5.92

*price indicative

Packaging Options:
RS Stock No.:
188-8467
Mfr. Part No.:
STD8N65M5
Brand:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

N

Maximum Continuous Drain Current

7 A

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

4V

Maximum Power Dissipation

70 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Typical Gate Charge @ Vgs

15 nC @ 10 V

Length

6.6mm

Width

6.2mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.5V

Height

2.17mm

N-channel MDmesh™ M5 Series, STMicroelectronics


The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.

Worldwide best RDS(on) area
Higher VDSSrating
High dv/dt capability
Excellent switching performance
Easy to drive
Applications
Switching applications


MOSFET Transistors, STMicroelectronics

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