STMicroelectronics N-Channel MOSFET, 11 A, 800 V, 3-Pin D2PAK STB11NM80T4
- RS Stock No.:
- 188-8461P
- Mfr. Part No.:
- STB11NM80T4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£57.25
(exc. VAT)
£68.70
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 18 | £5.725 |
| 20 - 48 | £5.15 |
| 50 - 98 | £4.64 |
| 100 + | £4.405 |
*price indicative
- RS Stock No.:
- 188-8461P
- Mfr. Part No.:
- STB11NM80T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 43.6 nC @ 10 V | |
| Width | 9.35mm | |
| Height | 4.37mm | |
| Forward Diode Voltage | 0.86V | |
| Minimum Operating Temperature | -65 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 43.6 nC @ 10 V | ||
Width 9.35mm | ||
Height 4.37mm | ||
Forward Diode Voltage 0.86V | ||
Minimum Operating Temperature -65 °C | ||
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