STMicroelectronics N-Channel MOSFET, 11 A, 3-Pin DPAK STD13N60DM2
- RS Stock No.:
- 188-8407P
- Mfr. Part No.:
- STD13N60DM2
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
£6.92
(exc. VAT)
£8.305
(inc. VAT)
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Units | Per unit |
|---|---|
| 5 + | £1.384 |
*price indicative
- RS Stock No.:
- 188-8407P
- Mfr. Part No.:
- STD13N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 11 A | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 360 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±25 V | |
| Width | 6.2mm | |
| Typical Gate Charge @ Vgs | 12.5 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.6V | |
| Height | 2.17mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 360 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±25 V | ||
Width 6.2mm | ||
Typical Gate Charge @ Vgs 12.5 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.6V | ||
Height 2.17mm | ||
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications
Extremely low gate charge and input capacitance
Low on-resistance
Extremely high dv/dt ruggedness
Zener-protected
Applications
Switching applications