STMicroelectronics N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK STB80NF55-06T4
- RS Stock No.:
- 188-8284
- Mfr. Part No.:
- STB80NF55-06T4
- Brand:
- STMicroelectronics
Subtotal (1 reel of 1000 units)*
£1,246.00
(exc. VAT)
£1,495.00
(inc. VAT)
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Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £1.246 | £1,246.00 |
*price indicative
- RS Stock No.:
- 188-8284
- Mfr. Part No.:
- STB80NF55-06T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 6.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Width | 9.35mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 142 nC @ 10 V | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.37mm | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 6.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Width 9.35mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 142 nC @ 10 V | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
Height 4.37mm | ||
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Exceptional dv/dt capability
Application oriented characterization
Applications
Switching application
Applications
Switching application
Application oriented characterization
Applications
Switching application
Applications
Switching application
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