Vishay N-Channel MOSFET, 72 A, 80 V, 8-Pin PowerPAK SO-8L SQJA78EP-T1_GE3
- RS Stock No.:
- 188-5157P
- Mfr. Part No.:
- SQJA78EP-T1_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£88.80
(exc. VAT)
£106.55
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 17 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £1.776 |
| 125 - 245 | £1.57 |
| 250 - 495 | £1.36 |
| 500 + | £1.254 |
*price indicative
- RS Stock No.:
- 188-5157P
- Mfr. Part No.:
- SQJA78EP-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 72 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK SO-8L | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.3V | |
| Minimum Gate Threshold Voltage | 2.3V | |
| Maximum Power Dissipation | 68 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Typical Gate Charge @ Vgs | 62 nC @ 10 V | |
| Length | 5mm | |
| Width | 4.47mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 1.01mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 72 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK SO-8L | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.3V | ||
Minimum Gate Threshold Voltage 2.3V | ||
Maximum Power Dissipation 68 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Typical Gate Charge @ Vgs 62 nC @ 10 V | ||
Length 5mm | ||
Width 4.47mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 1.01mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
Automotive N-Channel 80 V (D-S) 175 °C MOSFET.
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