Vishay N-Channel MOSFET, 45.1 A, 80 V, 8-Pin PowerPAK 1212-8 SIS126DN-T1-GE3
- RS Stock No.:
- 188-5134P
- Mfr. Part No.:
- SIS126DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 100 units (supplied on a continuous strip)*
£61.70
(exc. VAT)
£74.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 100 - 240 | £0.617 |
| 250 - 490 | £0.467 |
| 500 - 990 | £0.422 |
| 1000 + | £0.39 |
*price indicative
- RS Stock No.:
- 188-5134P
- Mfr. Part No.:
- SIS126DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 45.1 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK 1212-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 52 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 21.1 nC @ 10 V | |
| Width | 3.15mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Height | 1.07mm | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 45.1 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type PowerPAK 1212-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 52 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 21.1 nC @ 10 V | ||
Width 3.15mm | ||
Number of Elements per Chip 1 | ||
Length 3.15mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
Height 1.07mm | ||
- COO (Country of Origin):
- CN
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Very low RDS x Qg figure-of-merit (FOM)
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Very low RDS x Qg figure-of-merit (FOM)
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