Vishay N-Channel MOSFET, 150 A, 80 V, 3-Pin D2PAK SUM60020E-GE3
- RS Stock No.:
- 188-5107P
- Mfr. Part No.:
- SUM60020E-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£107.10
(exc. VAT)
£128.50
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 585 unit(s), ready to ship
Units | Per unit |
|---|---|
| 50 - 120 | £2.142 |
| 125 - 245 | £2.064 |
| 250 - 495 | £1.886 |
| 500 + | £1.78 |
*price indicative
- RS Stock No.:
- 188-5107P
- Mfr. Part No.:
- SUM60020E-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.4 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 375 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 151.2 nC @ 10 V | |
| Length | 10.41mm | |
| Height | 4.57mm | |
| Forward Diode Voltage | 1.5V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 80 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.4 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 375 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 151.2 nC @ 10 V | ||
Length 10.41mm | ||
Height 4.57mm | ||
Forward Diode Voltage 1.5V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
N-Channel 80 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through Vplateau
Maximum 175 °C junction temperature
Very low Qgd reduces power loss from passing through Vplateau