N-Channel MOSFET, 20 A, 30 V, 8-Pin PowerPAK 1212-SH Vishay SiSH472DN-T1-GE3
- RS Stock No.:
- 188-5104
- Mfr. Part No.:
- SiSH472DN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 25 units)*
£13.20
(exc. VAT)
£15.85
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.528 | £13.20 |
| 50 - 75 | £0.518 | £12.95 |
| 100 - 475 | £0.40 | £10.00 |
| 500 - 975 | £0.331 | £8.28 |
| 1000 + | £0.265 | £6.63 |
*price indicative
- RS Stock No.:
- 188-5104
- Mfr. Part No.:
- SiSH472DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK 1212-SH | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 12 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 28 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 19.5 nC @ 10 V | |
| Length | 3.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 3.3mm | |
| Height | 0.93mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK 1212-SH | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 12 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 28 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19.5 nC @ 10 V | ||
Length 3.3mm | ||
Maximum Operating Temperature +150 °C | ||
Width 3.3mm | ||
Height 0.93mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.2V | ||
N-Channel 30 V (D-S) MOSFET.
TrenchFET® power MOSFET
Optimized for synchronous buck operation
Optimized for synchronous buck operation