Vishay N-Channel MOSFET, 150 A, 40 V, 3-Pin D2PAK SUM40012EL-GE3
- RS Stock No.:
- 188-5088P
- Mfr. Part No.:
- SUM40012EL-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 50 units (supplied on a continuous strip)*
£95.10
(exc. VAT)
£114.10
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 25 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £1.902 |
| 125 - 245 | £1.788 |
| 250 - 495 | £1.678 |
| 500 + | £1.562 |
*price indicative
- RS Stock No.:
- 188-5088P
- Mfr. Part No.:
- SUM40012EL-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 150 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 2.2 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10.41mm | |
| Typical Gate Charge @ Vgs | 130 nC @ 10 V | |
| Width | 9.65mm | |
| Number of Elements per Chip | 1 | |
| Forward Diode Voltage | 1.5V | |
| Height | 4.57mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 150 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 2.2 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Maximum Operating Temperature +175 °C | ||
Length 10.41mm | ||
Typical Gate Charge @ Vgs 130 nC @ 10 V | ||
Width 9.65mm | ||
Number of Elements per Chip 1 | ||
Forward Diode Voltage 1.5V | ||
Height 4.57mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel 40 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency
Maximum 175 °C junction temperature
Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency