Name: P-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8SH Vishay SiSH407DN-T1-GE3
Brand: Vishay
SKU: 188-5085
Price: 0.87 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	P
	Maximum Continuous Drain Current	25 A
	Maximum Drain Source Voltage	20 V
	Package Type	PowerPAK 1212-8SH
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	19.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1V
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	33 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±8 V
	Length	3.3mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	62.5 nC @ 8 V
	Number of Elements per Chip	1
	Width	3.3mm
	Minimum Operating Temperature	-55 °C
	Height	0.93mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Vishay
	Channel Type P
	Maximum Continuous Drain Current 25 A
	Maximum Drain Source Voltage 20 V
	Package Type PowerPAK 1212-8SH
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 19.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1V
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 33 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±8 V
	Length 3.3mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 62.5 nC @ 8 V
	Number of Elements per Chip 1
	Width 3.3mm
	Minimum Operating Temperature -55 °C
	Height 0.93mm
	Forward Diode Voltage 1.2V

Datasheet SiSH407DN-T1-GE3

P-Channel 20 V (D-S) MOSFET.

TrenchFET® power MOSFET
Low thermal resistance PowerPAK® package with small size and low 0.9 mm profile

P-Channel MOSFET, 25 A, 20 V, 8-Pin PowerPAK 1212-8SH Vishay SiSH407DN-T1-GE3

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