N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S Vishay SISS42LDN-T1-GE3

Discontinued
Packaging Options:
RS Stock No.:
188-5071
Mfr. Part No.:
SISS42LDN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

39 A

Maximum Drain Source Voltage

100 V

Package Type

PowerPAK 1212-S

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

18 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

57 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Length

3.3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

32 nC @ 10 V

Width

3.3mm

Number of Elements per Chip

1

Height

0.78mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.1V

N-Channel 100 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM