Vishay N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK SQD40020E_GE3
- RS Stock No.:
- 188-5048
- Mfr. Part No.:
- SQD40020E_GE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 pack of 10 units)*
£10.08
(exc. VAT)
£12.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 1,960 unit(s) shipping from 30 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | £1.008 | £10.08 |
| 100 - 240 | £0.958 | £9.58 |
| 250 - 490 | £0.807 | £8.07 |
| 500 - 990 | £0.756 | £7.56 |
| 1000 + | £0.706 | £7.06 |
*price indicative
- RS Stock No.:
- 188-5048
- Mfr. Part No.:
- SQD40020E_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 100 A | |
| Maximum Drain Source Voltage | 40 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 4.7 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 107 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 84 nC @ 10 V | |
| Length | 10.41mm | |
| Width | 9.65mm | |
| Minimum Operating Temperature | -55 °C | |
| Automotive Standard | AEC-Q101 | |
| Height | 4.57mm | |
| Forward Diode Voltage | 1.5V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 100 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 4.7 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 107 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 84 nC @ 10 V | ||
Length 10.41mm | ||
Width 9.65mm | ||
Minimum Operating Temperature -55 °C | ||
Automotive Standard AEC-Q101 | ||
Height 4.57mm | ||
Forward Diode Voltage 1.5V | ||
Automotive N-Channel 40 V (D-S) 175 °C MOSFET
TrenchFET® power MOSFET
Package with low thermal resistance
Package with low thermal resistance
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