N-Channel MOSFET, 12 A, 80 V, 6-Pin PowerPAK SC-70 Vishay SIA108DJ-T1-GE3

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Packaging Options:
RS Stock No.:
188-5002
Mfr. Part No.:
SIA108DJ-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK SC-70

Mounting Type

Surface Mount

Pin Count

6

Maximum Drain Source Resistance

46 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

19 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

2.15mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

9.2 nC @ 10 V

Length

2.15mm

Forward Diode Voltage

1.2V

Minimum Operating Temperature

-55 °C

Height

0.75mm

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss