Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin TO-247AC SIHG22N60EF-GE3
- RS Stock No.:
- 188-4992P
- Mfr. Part No.:
- SIHG22N60EF-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 20 units (supplied in a tube)*
£71.20
(exc. VAT)
£85.40
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 450 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 48 | £3.56 |
| 50 - 98 | £3.36 |
| 100 - 198 | £3.16 |
| 200 + | £3.035 |
*price indicative
- RS Stock No.:
- 188-4992P
- Mfr. Part No.:
- SIHG22N60EF-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 19 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 182 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 179 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±30 V | |
| Number of Elements per Chip | 1 | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Typical Gate Charge @ Vgs | 48 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 20.82mm | |
| Forward Diode Voltage | 1.2V | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 19 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 182 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 179 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±30 V | ||
Number of Elements per Chip 1 | ||
Length 15.87mm | ||
Width 5.31mm | ||
Typical Gate Charge @ Vgs 48 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 20.82mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- CN
EF Series Power MOSFET With Fast Body Diode.
Low figure-of-merit (FOM) Ron x Qg
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low input capacitance (Ciss)
Reduced switching and conduction losses
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)