N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK Vishay SIHD186N60EF-GE3
- RS Stock No.:
- 188-4979
- Mfr. Part No.:
- SIHD186N60EF-GE3
- Brand:
- Vishay
374 In stock - FREE next working day delivery available
Price Each (In a Pack of 5)
£2.37
(exc. VAT)
£2.84
(inc. VAT)
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 45 | £2.37 | £11.85 |
| 50 - 120 | £2.11 | £10.55 |
| 125 - 245 | £1.896 | £9.48 |
| 250 - 495 | £1.778 | £8.89 |
| 500 + | £1.66 | £8.30 |
*price indicative
- RS Stock No.:
- 188-4979
- Mfr. Part No.:
- SIHD186N60EF-GE3
- Brand:
- Vishay
Technical Reference
Legislation and Compliance
Product Details
EF Series Power MOSFET With Fast Body Diode.
4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 19 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 201 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Minimum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 156 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Length | 6.73mm |
| Width | 6.22mm |
| Minimum Operating Temperature | -55 °C |
| Height | 2.25mm |
| Forward Diode Voltage | 1.2V |
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