Vishay N-Channel MOSFET, 19 A, 600 V, 3-Pin DPAK SIHD186N60EF-GE3

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RS will no longer stock this product.
Packaging Options:
RS Stock No.:
188-4979
Mfr. Part No.:
SIHD186N60EF-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

19 A

Maximum Drain Source Voltage

600 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

201 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

156 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

6.22mm

Length

6.73mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

21 nC @ 10 V

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

2.25mm

EF Series Power MOSFET With Fast Body Diode.

4th generation E series technology
Low figure-of-merit (FOM) Ron x Qg
Low effective capacitance (Co(er))
APPLICATIONS
Server and telecom power supplies
Switch mode power supplies (SMPS)
Power factor correction power supplies (PFC)

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