Vishay P-Channel MOSFET, 500 mA, 30 V, 3-Pin PowerPAK 0806 SiUD401ED-T1-GE3
- RS Stock No.:
 - 188-4963
 - Mfr. Part No.:
 - SiUD401ED-T1-GE3
 - Brand:
 - Vishay
 
Discontinued
- RS Stock No.:
 - 188-4963
 - Mfr. Part No.:
 - SiUD401ED-T1-GE3
 - Brand:
 - Vishay
 
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all  | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 500 mA | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK 0806 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 1.25 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±12 V | |
| Width | 0.6mm | |
| Typical Gate Charge @ Vgs | 1.3 nC @ 15 V | |
| Length | 0.8mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 0.4mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay  | ||
Channel Type P  | ||
Maximum Continuous Drain Current 500 mA  | ||
Maximum Drain Source Voltage 30 V  | ||
Package Type PowerPAK 0806  | ||
Mounting Type Surface Mount  | ||
Pin Count 3  | ||
Maximum Drain Source Resistance 3.5 Ω  | ||
Channel Mode Enhancement  | ||
Maximum Gate Threshold Voltage 1.4V  | ||
Minimum Gate Threshold Voltage 0.6V  | ||
Maximum Power Dissipation 1.25 W  | ||
Transistor Configuration Single  | ||
Maximum Gate Source Voltage ±12 V  | ||
Width 0.6mm  | ||
Typical Gate Charge @ Vgs 1.3 nC @ 15 V  | ||
Length 0.8mm  | ||
Number of Elements per Chip 1  | ||
Maximum Operating Temperature +150 °C  | ||
Height 0.4mm  | ||
Minimum Operating Temperature -55 °C  | ||
Forward Diode Voltage 1.2V  | ||
P-Channel 30 V (D-S) MOSFET.
TrenchFET® Gen III p-channel power MOSFET
Ultra small 0.8 mm x 0.6 mm outline
Ultra thin 0.4 mm max. Height
Ultra small 0.8 mm x 0.6 mm outline
Ultra thin 0.4 mm max. Height
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