Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3
- RS Stock No.:
- 188-4951P
- Mfr. Part No.:
- SIS862ADN-T1-GE3
- Brand:
- Vishay
Bulk discount available
Subtotal 125 units (supplied on a continuous strip)*
£77.875
(exc. VAT)
£93.50
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 8,900 unit(s), ready to ship
Units | Per unit |
|---|---|
| 125 - 225 | £0.623 |
| 250 - 600 | £0.588 |
| 625 - 1225 | £0.449 |
| 1250 + | £0.387 |
*price indicative
- RS Stock No.:
- 188-4951P
- Mfr. Part No.:
- SIS862ADN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 52 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | PowerPAK 1212-8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 11 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 39 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 3.15mm | |
| Number of Elements per Chip | 1 | |
| Length | 3.15mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 19.8 nC @ 10 V | |
| Height | 1.07mm | |
| Forward Diode Voltage | 1.1V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 52 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type PowerPAK 1212-8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 11 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 39 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 3.15mm | ||
Number of Elements per Chip 1 | ||
Length 3.15mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 19.8 nC @ 10 V | ||
Height 1.07mm | ||
Forward Diode Voltage 1.1V | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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