Vishay SUM40012EL N-Channel MOSFET, 150 A, 40 V Enhancement, 3-Pin TO-263 SUM40012EL-GE3
- RS Stock No.:
- 188-4926
- Mfr. Part No.:
- SUM40012EL-GE3
- Brand:
- Vishay
Currently unavailable
Sorry, we don't know when this will be back in stock.
- RS Stock No.:
- 188-4926
- Mfr. Part No.:
- SUM40012EL-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | SUM40012EL | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.2mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 130nC | |
| Maximum Power Dissipation Pd | 150W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Width | 9.65mm | |
| Length | 10.41mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series SUM40012EL | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.2mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 130nC | ||
Maximum Power Dissipation Pd 150W | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Width 9.65mm | ||
Length 10.41mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel 40 V (D-S) MOSFET.
TrenchFET® power MOSFET
Maximum 175 °C junction temperature
Excellent RDS-Qg and RDS-Qoss FOM reduce power loss from conduction and switching to enable high efficiency
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