Name: N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S Vishay SISS42LDN-T1-GE3
Brand: Vishay
SKU: 188-4903
Price: 0.69 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	39 A
	Maximum Drain Source Voltage	100 V
	Package Type	PowerPAK 1212-S
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	18 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2.5V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	57 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Maximum Operating Temperature	+150 °C
	Width	3.3mm
	Number of Elements per Chip	1
	Length	3.3mm
	Typical Gate Charge @ Vgs	32 nC @ 10 V
	Forward Diode Voltage	1.1V
	Minimum Operating Temperature	-55 °C
	Height	0.78mm

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 39 A
	Maximum Drain Source Voltage 100 V
	Package Type PowerPAK 1212-S
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 18 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2.5V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 57 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Maximum Operating Temperature +150 °C
	Width 3.3mm
	Number of Elements per Chip 1
	Length 3.3mm
	Typical Gate Charge @ Vgs 32 nC @ 10 V
	Forward Diode Voltage 1.1V
	Minimum Operating Temperature -55 °C
	Height 0.78mm

Datasheet SISS42LDN-T1-GE3

N-Channel 100 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM

N-Channel MOSFET, 39 A, 100 V, 8-Pin PowerPAK 1212-S Vishay SISS42LDN-T1-GE3

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