N-Channel MOSFET, 35 A, 30 V, 8-Pin PowerPAK 1212-SH Vishay SiSH114ADN-T1-GE3
- RS Stock No.:
- 188-4893
- Mfr. Part No.:
- SiSH114ADN-T1-GE3
- Brand:
- Vishay
Subtotal (1 reel of 3000 units)*
£822.00
(exc. VAT)
£987.00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 3000 + | £0.274 | £822.00 |
*price indicative
- RS Stock No.:
- 188-4893
- Mfr. Part No.:
- SiSH114ADN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 35 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | PowerPAK 1212-SH | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 9.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 39 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Length | 3.3mm | |
| Width | 3.3mm | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.93mm | |
| Forward Diode Voltage | 1.2V | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 35 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type PowerPAK 1212-SH | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 9.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 39 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Length 3.3mm | ||
Width 3.3mm | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Minimum Operating Temperature -55 °C | ||
Height 0.93mm | ||
Forward Diode Voltage 1.2V | ||
N-Channel 30-V (D-S) MOSFET.
TrenchFET® power MOSFET