N-Channel MOSFET, 16 A, 80 V, 8-Pin PowerPAK 1212 Vishay SIS108DN-T1-GE3

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
188-4885
Mfr. Part No.:
SIS108DN-T1-GE3
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

16 A

Maximum Drain Source Voltage

80 V

Package Type

PowerPAK 1212

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

44 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

24 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Length

3.15mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

9.2 nC @ 10 V

Width

3.15mm

Height

1.07mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

N-Channel 80 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss FOM