Name: N-Channel MOSFET, 106 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR120DP-T1-RE3
Brand: Vishay
SKU: 188-4881
Price: 1.11 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	106 A
	Maximum Drain Source Voltage	80 V
	Package Type	PowerPAK SO-8
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	4.5 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	3.5V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	100 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Width	5mm
	Length	5.99mm
	Typical Gate Charge @ Vgs	62.5 nC @ 10 V
	Height	1.07mm
	Forward Diode Voltage	1.1V
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 106 A
	Maximum Drain Source Voltage 80 V
	Package Type PowerPAK SO-8
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 4.5 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 3.5V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 100 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Width 5mm
	Length 5.99mm
	Typical Gate Charge @ Vgs 62.5 nC @ 10 V
	Height 1.07mm
	Forward Diode Voltage 1.1V
	Minimum Operating Temperature -55 °C

Datasheet SIR120DP-T1-RE3

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Very low RDS x Qg figure-of-merit (FOM)
Tuned for the lowest RDS x Qoss FOM

N-Channel MOSFET, 106 A, 80 V, 8-Pin PowerPAK SO-8 Vishay SIR120DP-T1-RE3

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