N-Channel MOSFET, 208 A, 45 V, 8-Pin PowerPAK SO Vishay SIDR608DP-T1-RE3
- RS Stock No.:
- 188-4869
- Mfr. Part No.:
- SIDR608DP-T1-RE3
- Brand:
- Vishay
Stock information currently inaccessible
- RS Stock No.:
- 188-4869
- Mfr. Part No.:
- SIDR608DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 208 A | |
| Maximum Drain Source Voltage | 45 V | |
| Package Type | PowerPAK SO | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.8 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.3V | |
| Minimum Gate Threshold Voltage | 1.1V | |
| Maximum Power Dissipation | 104 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +20 V | |
| Width | 5mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 111 nC @ 10 V | |
| Length | 5.99mm | |
| Height | 1.07mm | |
| Minimum Operating Temperature | -55 °C | |
| Forward Diode Voltage | 1.1V | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 208 A | ||
Maximum Drain Source Voltage 45 V | ||
Package Type PowerPAK SO | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.8 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.3V | ||
Minimum Gate Threshold Voltage 1.1V | ||
Maximum Power Dissipation 104 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +20 V | ||
Width 5mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 111 nC @ 10 V | ||
Length 5.99mm | ||
Height 1.07mm | ||
Minimum Operating Temperature -55 °C | ||
Forward Diode Voltage 1.1V | ||
N-Channel 45 V (D-S) MOSFET.
TrenchFET® Gen IV power MOSFET
45 V Drain-source break-down voltage
Tuned for low Qg and Qoss
45 V Drain-source break-down voltage
Tuned for low Qg and Qoss