Name: N-Channel MOSFET, 12 A, 80 V, 6-Pin PowerPAK SC-70 Vishay SIA108DJ-T1-GE3
Brand: Vishay
SKU: 188-4858
Price: 0.38 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	N
	Maximum Continuous Drain Current	12 A
	Maximum Drain Source Voltage	80 V
	Package Type	PowerPAK SC-70
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	46 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	19 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	±20 V
	Number of Elements per Chip	1
	Width	2.15mm
	Length	2.15mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	9.2 nC @ 10 V
	Forward Diode Voltage	1.2V
	Minimum Operating Temperature	-55 °C
	Height	0.75mm

	Select all
	Brand Vishay
	Channel Type N
	Maximum Continuous Drain Current 12 A
	Maximum Drain Source Voltage 80 V
	Package Type PowerPAK SC-70
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 46 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 19 W
	Transistor Configuration Single
	Maximum Gate Source Voltage ±20 V
	Number of Elements per Chip 1
	Width 2.15mm
	Length 2.15mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 9.2 nC @ 10 V
	Forward Diode Voltage 1.2V
	Minimum Operating Temperature -55 °C
	Height 0.75mm

Datasheet SIA108DJ-T1-GE3

N-Channel 80 V (D-S) MOSFET.

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss

N-Channel MOSFET, 12 A, 80 V, 6-Pin PowerPAK SC-70 Vishay SIA108DJ-T1-GE3

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