onsemi Dual MOSFET, 6-Pin TSOT-23 FDC3601N
- RS Stock No.:
- 186-8997
- Mfr. Part No.:
- FDC3601N
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 25 units)*
£9.05
(exc. VAT)
£10.85
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 2,450 unit(s) shipping from 13 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
---|---|---|
25 - 75 | £0.362 | £9.05 |
100 - 225 | £0.312 | £7.80 |
250 + | £0.271 | £6.78 |
*price indicative
- RS Stock No.:
- 186-8997
- Mfr. Part No.:
- FDC3601N
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Package Type | TSOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 6 | |
Maximum Power Dissipation | 960 mW | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand onsemi | ||
Package Type TSOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Power Dissipation 960 mW | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
These N-Channel 100V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
1.0 A, 100 V
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
RDS(on) = 500 mΩ@ VGS = 10 V
RDS(on) = 550 mΩ @ VGS = 6 V
Low gate charge (3.7nC typical)
Fast switching speed
High performance trench technology for extremely low RDS(ON)
SuperSOT™-6 package: small footprint 72%(smaller than standard SO-8), low profile (1mm thick)
Applications
This product is general usage and suitable for many different applications.
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