onsemi N-Channel MOSFET, 398.2 A, 60 V, 8-Pin DFNW8 NTMTS001N06CLTXG
- RS Stock No.:
- 186-1322P
- Mfr. Part No.:
- NTMTS001N06CLTXG
- Brand:
- onsemi
Bulk discount available
Subtotal 20 units (supplied on a continuous strip)*
£45.80
(exc. VAT)
£55.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 708 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 20 - 198 | £2.29 |
| 200 - 998 | £1.985 |
| 1000 - 1998 | £1.745 |
| 2000 + | £1.585 |
*price indicative
- RS Stock No.:
- 186-1322P
- Mfr. Part No.:
- NTMTS001N06CLTXG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 398.2 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | DFNW8 | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 1.05 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | ±20 V | |
| Width | 8mm | |
| Length | 8.1mm | |
| Typical Gate Charge @ Vgs | 165 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Number of Elements per Chip | 1 | |
| Height | 1.15mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 398.2 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DFNW8 | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 1.05 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage ±20 V | ||
Width 8mm | ||
Length 8.1mm | ||
Typical Gate Charge @ Vgs 165 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Number of Elements per Chip 1 | ||
Height 1.15mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Non Compliant
Small Footprint (8x8 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Power 88 Package, Industry Standard
These Devices are Pb−Free, Halogen Free/BFR Free
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
Power 88 Package, Industry Standard
These Devices are Pb−Free, Halogen Free/BFR Free